Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

The effect of ≈ 2.0 MeV-electron bombardment up to 1 × 1019 cm−2 at 300 K and post-irradiated isochronal annealing in the temperature range 20 to 500 °C on positron annihilation and electrical properties of InAs crystals are investigated. In irradiated samples positron trapping occurs in acceptor-type defects, supposedly VIn- The post-irradiated isochronal annealing in the temperature range 150 to 300°C reveals the formation of vacancy clusters, supposedly divacancies of In. The temperature dependence of positron trapping is investigated in the temperature range 77 to 300 K in non-irradiated and irradiated InAs samples. A positron lifetime τ = (285 ± 2) ps is estimated in initial InAs crystals. [Russian Text Ignored].

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