Работы, цитирующие эту работу

Работ: 1

Работа: Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

1. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

   V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

   СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000120