Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

Liquid-phase epitaxy of InGaAsP solid solutions isoperiodic with (001)GaAs substrates was studied in the miscibility gap. At the initial stage of deposition (first 1–2 s), thin (up to 0.15 µm) planar layers of homogeneous InGaAsP solid solutions are formed. This is aided by pronounced supercooling of the melt (by 10–15°C) and the resulting high growth rates. In further stages, growth becomes slower and a natural nanoheterostructure starts to form owing to decomposition of the solid solution. The formation of a nanoheterostructure comprising domains of different compositions with different lattice constants is accompanied by the appearance of an undulating relief on the sample surface, with the undulation magnitude increasing as the layer grows. Under the technological conditions employed, the thickness of InGaAsP solid solution layers containing a nanoheterostructure is limited to 0.5 µm.

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