I. S. Tarasov

Работ: 6

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

1. Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

   N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiĭ +4

   СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000057

2. Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

   D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov +2

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000033

3. Multiwell laser heterostructures fabricated by liquid-phase epitaxy

   A. Yu. Leshko, A. V. Lyutetskiĭ, A. V. Murashova +7

   СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000133

4. Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy

   A. D. Bondarev, D. A. Vinokurov, V. A. Kapitonov +3

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000135

5. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

   L. Ya. Karachinskiĭ, A. M. Georgievskii, N. A. Pikhtin +3

   СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000189

6. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

   L. S. Vavilova, V. A. Kapitonov, A. V. Murashova +1

   СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000117