Статья

Diffusion of terbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2006en

ABI

Аннотация

The diffusion of terbium in silicon in the temperature range of 1100–1250°C is studied using the direct radioisotope technique for the first time. The diffusion parameters of terbium in silicon are determined.

Темы

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1134/s1063782606060029

Цитирования и источники

Цитирований: 0Использованных источников: 1

Показатели — AkademScholar · Скоро