A. S. Saidov

Работ: 2

Physicotechnical Institute of Physics-the Sun Scientific Association, Academy of Sciences of Republic Uzbekistan, Tashkent, 700084, Uzbekistan

1. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

   Б. Сапаев, A. S. Saidov

   СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.278122

2. Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

   S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1

   СтатьяAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.018873