On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation
Marat S. YunusovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Ulugbek, UzbekistanM. KаrimovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Ulugbek, UzbekistanБ. Л. ОксенгендлерInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Ulugbek, Uzbekistan
ABI
Аннотация
Experimental data on the long-term relaxation of the photocurrent in compensated samples of Si〈B,S〉 and Si〈B,Rh〉 are analyzed on the basis of three mechanisms (sticking levels, recombination processes via levels with large relaxation, and separation of carriers in the spatial inhomogeneity field). It is shown that in a number of cases irradiation (by 60Co γ-rays at different temperatures) makes it possible to determine the dominant mechanisms.
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