V. T. Tulanov

Работ: 3

Ulugbek State University, Universitetskaya ul. 95, Vuzgorodok, Tashkent, 700095, Uzbekistan

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   СтатьяLaser Design and ApplicationsSemiconductors2001Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   СтатьяSemiconductor materials and interfacesTechnical Physics1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000202

3. Photoconductivity of sulfur-doped silicon near 10.6 µm

   Kh. B. Siyabekov, V. T. Tulanov

   СтатьяThermography and Photoacoustic TechniquesSemiconductors1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000231