Photoconductivity of sulfur-doped silicon near 10.6 µm

Аннотация

The extrinsic photoconductivity of Si〈S〉 under short-wavelength (10.6 µm) illumination was investigated in the pulsed regime. It was found that sensitivity can be increased by 2–3 orders of magnitude by short-wavelength illumination. It was established that increasing the degree of compensation of the impurity levels of sulfur by γ-ray-induced acceptors decreases both the dark conductivity and the photoresponse due to pulsed illumination with a CO2 laser.

Темы

Идентификаторы

DOI

10.1134/1.1187300

Цитирования и источники