Статья

Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

G. B. GorlinTashkent State University, 700095, Tashkent, UzbekistanV. T. TulanovTashkent State University, 700095, Tashkent, UzbekistanKh. B. SiyabekovTashkent State University, 700095, Tashkent, Uzbekistan

Technical Physicsjournal1997en

ABI

Аннотация

The effect of the degree of compensation of the impurity levels in Si〈S〉 on the photoconductivity near 10.6 µm has been investigated experimentally. A theoretical calculation for a one-level system with different degrees of compensation and for two values of the activation energy (ΔE) established that at least two impurity levels participate in 10.6-µm photoconductivity.

Темы

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Идентификаторы

DOI: 10.1134/1.1258810

Цитирования и источники

Цитирований: 0Использованных источников: 6

Показатели — AkademScholar · Скоро