Статья

Photodetectors based on osmium-doped silicon

Marat S. YunusovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanР. А. МуминовS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanG. NurkuzievS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanN. GapparovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanA. KholboevS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, Uzbekistan

Semiconductorsjournal1999en

ABI

Аннотация

Osmium-doped silicon photodetectors with a low control voltage have been constructed. The n-type Si was chosen as the initial material. The silicon was doped with osmium using a diffusion method. The characteristics of these structures are studied at 300 K.

Темы

Photonic and Optical Devices Silicon Nanostructures and Photoluminescence Thin-Film Transistor Technologies

Идентификаторы

DOI: 10.1134/1.1187916

Цитирования и источники

Цитирований: 0Использованных источников: 3

Показатели — AkademScholar · Скоро