N. Gapparov

Работ: 1

S. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, Uzbekistan

1. Photodetectors based on osmium-doped silicon

   Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

   СтатьяPhotonic and Optical DevicesSemiconductors1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000099