Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures

Injection enhancement of photocurrent in structures of the p +-n-n + type fabricated on the basis of films of polycrystalline silicon grown on commercial silicon substrates has been investigated. The questions of obtaining injection photodetectors and other bistable elements with the aid of α-irradiation and heat treatment are discussed.

Перевод пока недоступен