Статья

Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

L. O. OlimovBabur Andizhan State University, ul. Universiteta 129, Andizhan, 710000, Uzbekistan

Semiconductorsjournal2012en

ABI

Аннотация

The effect of alkali metals on carrier drift from grain boundaries to a polycrystalline silicon surface is experimentally studied. The results obtained show that an increase in the dopant concentration during the diffusion, desorption, and adsorption of alkali metals along grain boundaries leads to an increase in the potential barrier.

Темы

Silicon and Solar Cell Technologies Advancements in Semiconductor Devices and Circuit Design Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1134/s1063782612070159

Цитирования и источники

Цитирований: 7 Использованных источников: 7

Показатели — AkademScholar · Скоро