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I. R. Bekpulatov

45 works

Institute of Fire Safety of the Ministry of Emergencies of the Republic of Uzbekistan

  1. Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

    А.С. Рысбаев, I. R. Bekpulatov, Б.Д. Игамов +1

    ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20192 citations
    ABI

  2. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

    Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

    ArticleIon-surface interactions and analysisEurasian journal of physics and functional materials20232 citations
    ABI

  3. Аnаlysis оf Na-А zeоlite bаsed оn kаоlin using аn X-rаy diffrаctоmeter

    Muxlis Оydinоv, Bakhrom Igаmоv, I. R. Bekpulatov +2

    ArticleElectric Power Systems and ControlChemical Bulletin of Kazakh National University20242 citations
    ABI

  4. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    ArticleSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 citations
    ABI

  5. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    ArticleSemiconductor materials and devicesAIP conference proceedings20241 citations
    ABI

  6. Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

    B.B. Gaibnazarov, Gunel Imanova, Ш. Т. Хожиев +5

    ArticleAdvanced Materials and Semiconductor TechnologiesIntegrated ferroelectrics20231 citations
    ABI

  7. Correction: Surface evaluation of carbonitride coating materials at high temperature: an investigation of oxygen adsorption on crystal surfaces by molecular dynamics simulation

    M.N. Mirzayev, Gunel Imanova, D. Neov +12

    ArticleDiamond and Carbon-based Materials ResearchJournal of Porous Materials20241 citations
    ABI

  8. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations
    ABI

  9. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20211 citations
    ABI

  10. Development of thermal sensors by implantation ions P+ and B+ in different sides of Si(111)

    I. R. Bekpulatov, А.С. Рысбаев, Sh.Kh. Dzhuraev +1

    ArticleSilicon and Solar Cell TechnologiesEurasian journal of physics and functional materials20180 citations
    ABI

  11. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    ArticleSemiconductor materials and interfacesФизика и техника полупроводников20220 citations
    ABI

  12. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20230 citations
    ABI

  13. Formation of Barium Silicide Coatings by Vacuum Thermal Evaporation Methods

    Bakhrom Igаmоv, Aleksey Kamardin, I. R. Bekpulatov +3

    Articlenanoparticles nucleation surface interactions20240 citations
    ABI

  14. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfaces20240 citations
    ABI

  15. Correlation between thickness-dependent morphology, phase structure, and vibrational properties of TiO2 thin films deposited via DC magnetron sputtering: A multi-technique characterization approach

    Б.Д. Игамов, I. R. Bekpulatov, A.M. Normamatov +2

    ArticleZnO doping and propertiesNext Materials20250 citations
    ABI

  16. Investigation of the formation mechanisms, crystallographic evolution and microstructural characteristics of the ZrSi2 phase on the Si(111) surface

    Б.Д. Игамов, I. R. Bekpulatov, A.I. Kamardin +4

    ArticleSemiconductor materials and interfacesNext Materials20250 citations
    ABI

  17. Electrophysical Properties and Surface Characteristics of BaTiO <sub>3</sub> Thin Films Produced by Ion-Plasma Method

    K.T. Dovranov, Muradulla Normuradov, I. R. Bekpulatov +6

    ArticleFerroelectric and Piezoelectric Materials20250 citations
    ABI

  18. Surface Morphology of Ni/GaAs Thin Films Produced by Ion-Plasma Method

    K.T. Dovranov, Shakhnoza Jurayeva, Muradulla Normuradov +6

    ArticleSurface Roughness and Optical Measurements20250 citations
    ABI

  19. Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

    U.Kh. Kholikov, Ш. Т. Хожиев, И.О. Косимов +7

    ArticleZnO doping and propertiesOptics Communications20250 citations
    ABI

  20. Computer modeling of the adsorption of C20 fullerene molecules on reconstructed silicon Si(001) 2 × 1 and Si(111) 7 × 7 surfaces

    I. Z. Urolov, I. D. Yadgarov, I. R. Bekpulatov +1

    ArticleFullerene Chemistry and ApplicationsTheoretical Chemistry Accounts20260 citations
    ABI