Article

Change of electrophysical properties of the Si(111) and Si(100) surface in the process of ion implantation and next annealing

А.С. РысбаевTashkent State Technical UniversityI. R. BekpulatovInstitute of Fire Safety of the Ministry of Emergencies of the Republic of UzbekistanБ.Д. ИгамовTashkent State Technical UniversitySh.X. JuraevTermez State University

Eurasian journal of physics and functional materialsjournal2019en

ABI

Abstract

The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.

Topics

Semiconductor materials and interfaces Ion-surface interactions and analysis Electron and X-Ray Spectroscopy Techniques

Identifiers

DOI: 10.29317/ejpfm.2019030307

Citations and references

Cited by 20 references

Metrics — AkademScholar · Coming soon