Obtaining Nano-Sized Silicide Films MESi2 for the Contact System
Abstract
Using the method of implantation of Ba<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions in combination with heating, a barrier layer was created between the contacting metal Cu and silicon. It has been shown that the formation of a BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> barrier layer with a thickness of ~100 A leads to a decrease in the depth of diffusion of Cu into the BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>Si system by up to 5–6 times, and does not exceed more than 110–120 Å. The results of a study of the current-voltage characteristics of the system's current-voltage characteristics showed that good ohmic contact when irradiating the system with a light flux is maintained up to Φ ≈ 1000-1000 lux.