Мақола

Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

Jasur JumayevTashkent State Technical University,Tashkent,UzbekistanБ. Е. УмирзаковTashkent State Technical University,Tashkent,UzbekistanI. R. BekpulatovKarshi State University,Karshi,UzbekistanIlkhom TurapovVera LobodaPeter the Great St. Petersburg Polytechnic University,Saint Petersburg,Russian FederationA. S. KorotkovPeter the Great St. Petersburg Polytechnic University,Saint Petersburg,Russian Federation

2024en

ABI

Аннотация

Using the method of implantation of Ba<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions in combination with heating, a barrier layer was created between the contacting metal Cu and silicon. It has been shown that the formation of a BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> barrier layer with a thickness of ~100 A leads to a decrease in the depth of diffusion of Cu into the BaSi<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>Si system by up to 5–6 times, and does not exceed more than 110–120 Å. The results of a study of the current-voltage characteristics of the system's current-voltage characteristics showed that good ohmic contact when irradiating the system with a light flux is maintained up to Φ ≈ 1000-1000 lux.

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Мавзулар

Semiconductor materials and interfaces Intermetallics and Advanced Alloy Properties Molecular Junctions and Nanostructures

Идентификаторлар

DOI: 10.1109/eexpolytech62224.2024.10755824

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