On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing
А.С. РысбаевKarshi State University, 180103, Karshi, UzbekistanM. T. NormurodovKarshi State University, 180103, Karshi, UzbekistanJ. B. KhujaniyozovTashkent State Technical University, 100095, Tashkent, UzbekistanA. A. RysbaevKarshi State University, 180103, Karshi, UzbekistanD. A. NormurodovKarshi State University, 180103, Karshi, Uzbekistan
ABI
Abstract
The formation of thin single-crystal films of Li, Cs, Rb, and Ba silicides, formed during the implantation of ions in Si(111) and Si(100) with a low energy (<5 keV) and a large dose (~1017cm–2) are studied by electron spectroscopy and slow electron diffraction. It is established that the implantation of Li, Cs, Rb, and Ba ions with an energy of 1 keV and a dose of 2 × 1017 cm–2 with subsequent short-term heating leads to the formation of films with the following superstructures: Si(111)–2 × 2Rb, Si(111)–4 × 4Cs, and Si(111)–4 × 4Li. The effect of ion implantation and subsequent heating on the frequency of surface and bulk plasma oscillations of valence electrons in silicon is described.
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