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Comparison of parameters of heteroepitaxial structures

A. K. TashatovKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanRumiya BeytullayevaKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanT T UngbayevichKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanU A PardayevichKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, UzbekistanO YunusKarshi Engineering and Economics Institute, Mustakillik 225, Karshi, Kashkadarya region, 180100, Uzbekistan
IOP Conference Series Materials Science and Engineeringconference2020en
ABI

Abstract

Abstract In this work, the structure and properties of heteroepitaxial and multilayer thin film systems obtained by thermal diffusion, MBE, and ion implantation have been comprehensively studied created.

Topics

Silicon and Solar Cell TechnologiesIon-surface interactions and analysisSemiconductor materials and interfaces

Identifiers

DOI
10.1088/1757-899x/919/2/022006

Citations and references

Cited by 12 references
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