Article

On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

А.С. РысбаевTashkent State Technical University, Tashkent, UzbekistanA. K. TashatovKarshi Engineering Economics Institute, Karshi, UzbekistanSh. X. DzhuraevTashkent State Technical University, Tashkent, UzbekistanZh. B. KhuzhaniyazovTashkent State Technical University, Tashkent, UzbekistanG. P. ArzikulovTashkent State Technical University, Tashkent, UzbekistanS. S. NasriddinovTashkent State Technical University, Tashkent, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2011en

ABI

Abstract

Highly perfect epitaxial heterostructure CoSi2 films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing of epitaxial films at T = 900–950 K leads to the formation of new CoSi2/Si(111)-2 × 2 and CoSi2/Si(100)−2 × 4 superstructures.

Topics

Surface and Thin Film Phenomena Electron and X-Ray Spectroscopy Techniques Advanced Materials Characterization Techniques

Identifiers

DOI: 10.1134/s1027451011100193

Citations and references

Cited by 3 3 references

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