Electronic and Optical Properties of NiSi2/Si Nanofilms
Б. Е. УмирзаковTashkent State Technical University, 100095, Tashkent, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, 100095, Tashkent, UzbekistanA. K. TashatovTashkent State Technical University, 100095, Tashkent, UzbekistanN. M. MustafoevaTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Abstract
Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi2/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi2 films start to set in at d = 5.0–6.0 nm.