Article

Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

Y. S. ErgashovTashkent State Technical University, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, Tashkent, 100095, UzbekistanЭ. А. РаббимовTashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2015en

ABI

Abstract

The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O 2 + ions in Si (111) with subsequent annealing are investigated. It is established that at high ion implantation doses (D ≥ 6 × 1016 cm−2), continuous homogeneous polycrystalline SiO2 films form, while at relatively low doses (D = 8 × 1015−4 × 1016 cm−2), SiO2 films with regularly arranged Si nano-areas with a density of 1010–1011 cm−2 form.

Topics

Ion-surface interactions and analysis Silicon Nanostructures and Photoluminescence Diamond and Carbon-based Materials Research

Identifiers

DOI: 10.1134/s1027451015020287

Citations and references

Cited by 16 4 references

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