Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation
Y. S. ErgashovTashkent State Technical University, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваTashkent State Technical University, Tashkent, 100095, UzbekistanЭ. А. РаббимовTashkent State Technical University, Tashkent, 100095, Uzbekistan
ABI
Аннотация
The topography, composition, and electronic and crystal structures of the surface of SiO2 films fabricated by the implantation of O 2 + ions in Si (111) with subsequent annealing are investigated. It is established that at high ion implantation doses (D ≥ 6 × 1016 cm−2), continuous homogeneous polycrystalline SiO2 films form, while at relatively low doses (D = 8 × 1015−4 × 1016 cm−2), SiO2 films with regularly arranged Si nano-areas with a density of 1010–1011 cm−2 form.
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Показатели — AkademScholar · Скоро