Article

Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

D. M. MuradkabilovAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, UzbekistanБ. Е. УмирзаковAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2013en

ABI

Abstract

A new way for obtaining nanocontacts on the surface of semiconductors using Si (111) thin films as an example is proposed. The essence of the method lies in the fact that, first, cobalt-silicide nanofilms with a thickness of 45–50 Å are formed by ion implantation in combination with annealing; then, atoms of the contact metal (Al) are sputtered. The specific resistance of the CoSi2 nanofilms is (2–3) × 10−5 Ω × cm.

Topics

Ion-surface interactions and analysis Semiconductor materials and devices Nanowire Synthesis and Applications

Identifiers

DOI: 10.1134/s1027451013050376

Citations and references

Cited by 14 12 references

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