Article

Procedure for determining defects in sputtered clusters of ionic crystals

Utkirjon SharopovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanБ.Г. АтабаевInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanR. DjabbarganovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanМ. К. КурбановInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, UzbekistanMirkomil SharipovInstitute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent, 100125, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2016en

ABI

Abstract

The results obtained using methods of total current spectroscopy (TCS) and secondary-ion mass spectroscopy (SIMS) under ion bombardment of LiF crystals are analyzed. It is shown that the majority of the products of crystal sputtering contain point defects. A procedure for determining defects in sputtered clusters of ionic crystals is developed.

Topics

Ion-surface interactions and analysis Diamond and Carbon-based Materials Research Force Microscopy Techniques and Applications

Identifiers

DOI: 10.1134/s1027451016010328

Citations and references

Cited by 14 11 references

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