Article

Emission and optical properties of SiO2/Si thin films

Д. А. ТашмухамедоваTashkent State Technical University, Tashkent, 100095, UzbekistanM. B. YusupjanovaTashkent State Technical University, Tashkent, 100095, Uzbekistan

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniquesjournal2016en

ABI

Abstract

The energy-band parameters and the emission and optical properties of SiO2/Si films of different thicknesses prepared by thermal oxidation and ion bombardment are studied. It is shown that the band gap E g of the SiO2/Si film with a thickness of 30–40 Å is 8.8–8.9 eV. In the transition layer, the E g value and secondary-electron emission coefficient σm steadily decrease with increasing depth.

Topics

Silicon Nanostructures and Photoluminescence Ion-surface interactions and analysis Thin-Film Transistor Technologies

Identifiers

DOI: 10.1134/s1027451016050438

Citations and references

Cited by 6 3 references

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