Defect Formation on the Surface of ZnO Using Low-Energy Electrons
Utkirjon SharopovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanБ.Г. АтабаевArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, UzbekistanR. DjabbarganovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Tashkent, Uzbekistan
ABI
Аннотация
Defect formation on the surface of zinc oxide using low-energy electrons is studied by the total-current-spectroscopy method. The formation of cation and anion vacancies on the surface is shown. The energy threshold for the formation of anion vacancies (~20 eV) on the surface of ZnO is determined. It is shown that the negative potential of the surface decreases in the case of irradiation with electrons with energies above 120 eV. The experimentally observed kinetic characteristics of the charging of a ZnO crystal are attributed to modification of the crystal surface and the generation of radiation-induced defects, which are electron traps.
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