Статья

The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon

M. KаrimovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanSh. MakhkamovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanN.A. TursunovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanSh. A. MakhmudovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of UzbekistanA. A. SulaimonovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan

Russian Physics Journaljournal2011en

ABI

Аннотация

Аннотация отсутствует.

Темы

Advanced Materials and Semiconductor Technologies Advanced Energy Technologies and Civil Engineering Innovations Semiconductor materials and interfaces

Идентификаторы

DOI: 10.1007/s11182-011-9656-6

Цитирования и источники

Цитирований: 0Использованных источников: 1

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