A. O. Kurbanov

Работ: 7

Andijan State University

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   СтатьяSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2019Цитирований: 5

   ABIABI:AkademIndex/openalex/2019.article.000379

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.235254

3. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

   Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

   СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.500801

4. Interaction of deep level impurities with radiation defects in silicon under γ -irradiation

   N.J. Odilova, M. Kаrimov, K. A. Begmatov +2

   СтатьяSilicon and Solar Cell Technologies2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000389

5. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

   M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

   СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000333

6. Influence of γ- radiation on the recombination properties of P-type nickel doped silicon

   A. O. Kurbanov, M. Kаrimov

   СтатьяSilicon and Solar Cell Technologies2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000353

7. Study of influence of γ-quanta 60 Co on recombination properties of Si and Si

   M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +2

   СтатьяSemiconductor materials and interfaces2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000467