Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

Thermal annealing was used to study silicon samples having different sulfur concentrations. It was established that the temperature at which the sulfur centers decay depends on the concentration of sulfur atoms N s in the overcompensated silicon. As the distance between the impurities (N s −1/3 ) decreases, the decay temperature increases. The effect can be attributed to characteristic features of the distribution of the compensating sulfur impurity atoms inside a region of fluctuation, formed in silicon during doping.

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