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Работ: 1

Работа: Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   СтатьяSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.000971