Influence of the conductivity type of silicon on the process of radiation degradation of solar cells
Sh. MakhkamovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanР. А. МуминовPhysical Technical Institute, Physics of the Sun Scientific Association, Uzbek Academy of Sciences, Tashkent, UzbekistanM. KаrimovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanА. R. SattievInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanM. N. ErdonovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, UzbekistanKh. M. KholmedovInstitute of Nuclear Physics, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Аннотация
The effectiveness of introduction of radiation defects (RDs) into the base of solar cells (SCs) during irradiation by γ-quanta 60Co depending on resistivity and type of monocrystalline silicon and the effect of induced RDs on photoelectric characteristics of SCs is studied. It is shown that divacancies with levels E c −0.39 eV and E v +0.31 eV, due to the complex V-O-C, are the dominant radiation defects responsible for degradation of characteristics and parameters of silicon SCs during operation in radiation fields.
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