Статья

Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

M. AshurovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanSh. MakhkamovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanN.A. TursunovInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, UzbekistanS.V. MartynchenkoInstitute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan

MRS Proceedingsjournal1998en

ABI

Аннотация

Аннотация отсутствует.

Темы

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Идентификаторы

DOI: 10.1557/proc-510-265

Цитирования и источники

Цитирований: 0Использованных источников: 1

Показатели — AkademScholar · Скоро