Статья

Diffusion of erbium in silicon

С. З. ЗайнабидиновTashkent State University, TashkentD.E. NazirovTashkent State University, TashkentA. Zh. AkbarovTashkent State University, TashkentA. A. IminovTashkent State University, TashkentT. M. ToshtemirovTashkent State University, Tashkent

Technical Physics Lettersjournal1998en

ABI

Аннотация

Diffusion of erbium in silicon has been investigated by the electric method. The erbium diffusion coefficient in the temperature range 1150–1250 °C increases from 1.4×10−13 to 6.2×10− 13 cm2·s−1. The values obtained for the diffusion coefficient of erbium in silicon are in good agreement with data obtained by the method of tagged atoms.

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Темы

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Silicon Nanostructures and Photoluminescence

Идентификаторы

DOI: 10.1134/1.1261999

Цитирования и источники

Цитирований: 0Использованных источников: 3

Показатели — AkademScholar