Thermal evolution of impurity-induced energy levels in platinum-doped silicon

This study investigates the formation of impurity-induced energy levels and their influence on the electrophysical properties of platinum-doped p-type silicon (p-Si<B,Pt>). Platinum atoms were introduced into monocrystalline silicon through vapor-phase diffusion at temperatures of 950°C, 1050°C, and 1150°C under high vacuum conditions (10⁻⁴ mm Hg) for 5 hours. Hall-effect measurements were performed using the MS-7000 system, and the resulting data were processed using OriginPro 2022. The analysis of the temperature dependence of charge carrier concentration (200–450 K) revealed the emergence of both shallow and deep acceptor levels within the bandgap. The activation energies for boron-related shallow levels were found to be in the range of 0.034–0.047 eV, while deeper levels associated with platinum and complex defect formations were observed at 0.066–0.12 eV. These deep levels are attributed to interactions between Pt atoms and intrinsic point defects, such as vacancies and interstitials, resulting in the formation of Pt–vacancy (Pt–V) complexes. Thermal annealing at higher temperatures was shown to modify the activation energies, indicating the transformation of defect structures and redistribution of impurity atoms. The findings highlight the significant role of platinum in controlling charge recombination and the mechanisms governing conductivity in p-type silicon. Such results provide valuable insights for the design and optimization of silicon-based high-speed transistors, sensors, and integrated electronic systems.

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