Influence of Temperature on Current-Voltage characteristics of n-GaAs – p-(GaAs)1-x-y(ZnSe)x(Ge2)y heterostructures

It is established that the I – V characteristic of such structures is described by the exponential dependence I = I 0 ∙exp(qV/ckT) at low voltages (no higher than 0.4 V) and by the power dependence J ~ V α , where the exponent α varies with increasing voltage at high voltages ( V > 0.5 V). The results are treated within the framework of the theory of the drift mechanism of current transfer taking into account the possibility of the exchange of free carriers within the recombination complex.

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