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А. С. Саидов

Работ: 101

Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan

  1. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяAdvanced Thermoelectric Materials and DevicesApplied Solar Energy2010Цитирований: 3
    ABI

  2. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3
    ABI

  3. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2004Цитирований: 3
    ABI

  4. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  5. Structure and photoelectric properties of Si1 − x Sn x epilayers

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2010Цитирований: 3
    ABI

  6. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2012Цитирований: 3
    ABI

  7. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
    ABI

  8. Thermovoltaic effect of pSi-n(Si2)1−x(ZnS)x structures

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 2
    ABI

  9. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace

    А. С. Саидов, A. Yu. Leyderman, Sh. T. Manshurov

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2010Цитирований: 2
    ABI

  10. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2
    ABI

  11. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    СтатьяChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering2021Цитирований: 2
    ABI

  12. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1

    СтатьяSemiconductor materials and interfacesActa Physica Polonica A2022Цитирований: 2
    ABI

  13. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies2022Цитирований: 2
    ABI

  14. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

    СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2022Цитирований: 2
    ABI

  15. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth2023Цитирований: 2
    ABI

  16. Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

    А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2001Цитирований: 2
    ABI

  17. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 2
    ABI

  18. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    СтатьяPhase-change materials and chalcogenidesTechnical Physics Letters1998Цитирований: 2
    ABI

  19. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2010Цитирований: 2
    ABI

  20. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2
    ABI

  21. Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

    А. С. Саидов, Alozhon Sh. Razzokov

    СтатьяSilicon Nanostructures and PhotoluminescenceSiberian Journal of Physics2020Цитирований: 2
    ABI

  22. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    А. С. Саидов, A. Sh. Razzakov, Kurban Gaimnazarov

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2001Цитирований: 2
    ABI

  23. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2010Цитирований: 2
    ABI

  24. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2017Цитирований: 2
    ABI

  25. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    А. С. Саидов, A. Sh. Razzakov, É. A. Koshchanov

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters2001Цитирований: 2
    ABI