Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle
А. С. СаидовPhysical-Technical Institute NPO ``Physics-Sun'' of the Academy of Sciences of the Republic of Uzbekistan, Ch. Aitmatova 2B, 100084, Tashkent, UzbekistanA. Sh. RazzokovUrgench State University, Urgench, Kh. Alimjan 14, 220100, UzbekistanС.И. ПетрушенкоV.N. Karazin Kharkiv National University, Svobody square 4, 61077, Kharkiv, UkraineС.В. ДукаровV.N. Karazin Kharkiv National University, Svobody square 4, 61077, Kharkiv, Ukraine
ABI
Аннотация
From a limited tin solution-melt in the temperature range of 950-700
Темы
Идентификаторы
Цитирования и источники
Показатели — AkademScholar · Скоро