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A. Sh. Razzokov

Работ: 13

Urgench State University, Urgench, Uzbekistan

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    СтатьяSemiconductor materials and interfacesCrystallography Reports2022Цитирований: 5
    ABI

  2. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1

    СтатьяSemiconductor materials and interfacesActa Physica Polonica A2022Цитирований: 2
    ABI

  3. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, А. С. Саидов, V. V. Gіrzhon +1

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies2022Цитирований: 2
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth2023Цитирований: 2
    ABI

  5. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    СтатьяPhotonic and Optical DevicesInternational Journal of Thermodynamics2022Цитирований: 1
    ABI

  6. THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

    Khushnudbek Eshchanov, A. Sh. Razzokov

    СтатьяSolidification and crystal growth phenomena2021Цитирований: 0
    ABI

  7. Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

    A. Sh. Razzokov, Khushnudbek Eshchanov

    СтатьяHermeneutics and Narrative IdentityDergiPark (Istanbul University)2021Цитирований: 0
    ABI

  8. Growth of Epitaxial Layers of the Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Sn&lt;sub&gt;y&lt;/sub&gt; Solid Solution from a Tin Solution-Melt

    A. Sh. Razzokov

    СтатьяPhotonic and Optical DevicesSiberian Journal of Physics2023Цитирований: 0
    ABI

  9. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    СтатьяSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences2024Цитирований: 0
    ABI

  10. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, А. С. Саидов

    СтатьяAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics2025Цитирований: 0
    ABI

  11. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI

  12. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Gіrzhon, I. Shtablavyi

    СтатьяSilicon Nanostructures and PhotoluminescenceVacuum2025Цитирований: 0
    ABI

  13. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0
    ABI