International Journal of Mathematics and Physics
Работ: 4
Журнал · ISSN 2218-7987
STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD
A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov
СтатьяAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics2025Цитирований: 0ABI