The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures
Б. СапаевPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanА. С. СаидовPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Epitaxial layers of (Si2)1−x (ZnS)x (0.08≤x≤0.92) solid solutions were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal polycrystalline silicon substrates. The morphology, photoelectric properties, and current-voltage characteristics of the epilayers have been studied. The obtained (Si2)1−x (ZnS)x layers exhibit homogeneous depth-concentration profiles of components. The photo-sensitivity interval extends from 1.05 to 3.0 eV, which makes the obtained structures a promising material for photo-and optoelectronic devices.
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Цитирования и источники
Показатели — AkademScholar · Скоро