Перейти к основному содержанию
AkademIndex

Продукты

Для разработчиков

AkademBaseОткрытый API экосистемы

А. С. Саидов

Работ: 101

Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

  1. Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov

    СтатьяThermal Radiation and Cooling TechnologiesApplied Solar Energy2008Цитирований: 2
    ABI

  2. Thermoelectric properties of technical-grade Si, remelted in solar furnace

    А. С. Саидов

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2008Цитирований: 2
    ABI

  3. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 1
    ABI

  4. The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Sh. T. Manshurov

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 1
    ABI

  5. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  6. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1
    ABI

  7. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    СтатьяSilicon Nanostructures and PhotoluminescenceSilicon2024Цитирований: 1
    ABI

  8. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2025Цитирований: 1
    ABI

  9. Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y

    А. С. Саидов, Usmonov Sn. N., U. Kh. Rakhmonov +2

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Materials Science Research2012Цитирований: 1
    ABI

  10. Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions

    Б. Сапаев, А. С. Саидов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
    ABI

  11. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 1
    ABI

  12. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
    ABI

  13. Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

    Б. Сапаев, А. С. Саидов, S. Dadamukhamedov

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics2004Цитирований: 1
    ABI

  14. Study of GaSb doped with Te as a material for photovoltaic systems

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2015Цитирований: 1
    ABI

  15. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 1
    ABI

  16. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2013Цитирований: 1
    ABI

  17. Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution

    D. V. Saparov, М. С. Саидов, А. С. Саидов

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 1
    ABI

  18. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2007Цитирований: 1
    ABI

  19. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    СтатьяMaterial Science and ThermodynamicsSemiconductors2004Цитирований: 1
    ABI

  20. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  21. Study of current-voltage characteristics of Si-(Si 2 ) 1-x (GaAs) x grown on polycrystal silicon substrate by Liquid Phase Epitaxy method

    А. С. Саидов, А. Кутлимратов, Б. Сапаев +1

    СтатьяSemiconductor materials and interfaces2004Цитирований: 0
    ABI

  22. Composition and photoelectric properties of epitaxial silicon layers grown from a tin-based solution melt of technical silicon

    Б. Сапаев, А. С. Саидов, Sh.I. Ibragimov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  23. Optical properties of (Ge2)1−x (InP)x solid solutions

    Sh. K. Ismailov, А. С. Саидов, K. Durshimbetov +1

    СтатьяPhase-change materials and chalcogenidesTechnical Physics Letters2006Цитирований: 0
    ABI

  24. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 0
    ABI

  25. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    СтатьяInsect and Pesticide ResearchApplied Solar Energy2009Цитирований: 0
    ABI