Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure
А. С. СаидовInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanU. Kh. RakhmonovInstitute of Physics and Technology, NPO Fizika-Solntse, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The results of creating a variband epitaxial (Si2)1 − x − y (ZnSe) x (GaP) y layer and observing the photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) heterostructure heated by concentrated solar radiation are detailed. It is shown that the photothermal and thermal voltages in the heterostructure equal 5.8 and 1.2 mV at a temperature of 80°C. The observed relatively high photothermal voltage value is attributed to the possible extrinsic thermophotoelectric effect in the layer of diluted solid solution adjacent to the p-n junction.
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