Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions
Б. СапаевPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanА. С. СаидовPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Epitaxial layers of Si1−x Snx(0≤x≤0.04) solid solutions on silicon substrates were grown by liquid phase epitaxy in a temperature interval from 1050 to 950°C. Optimum conditions favoring the growth of crystallographically perfect epitaxial films of Si1−x Snx were established based on the results of the X-ray diffraction, X-ray radiometry, and morphology investigations. The obtained Si-Si1−x Snx structures are intended for use in the technology of various microelectronic devices.
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