Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution
Sh. N. UsmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Bukhara, UzbekistanА. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Bukhara, UzbekistanМ. С. СаидовPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Bukhara, UzbekistanK. A. AmonovPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Bukhara, Uzbekistan
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Аннотация
Increase of the photosensitivity of the pSi-n(Si2)1 − x (ZnSe) x (0 ≤ x ≤ 0.01) structure exposed to gamma radiation with photon energy E ph ≥ 2.3 eV has been demonstrated. It is shown that irradiation with dose up to 104 rad raises and radiation with dose up to 105 rad reduces the forward current of the pSi-n(Si2)1 − x (ZnSe) x structure.
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