Growth and photoelectric properties of graded-gap Si-(Si2)1−x(GaP)x heterostructures

Theoretical grounds for formation of continuous substitutional solid solutions are analyzed taking into account the generalized moments, the difference in valence, and covalent radii of initial components. On the basis of these studies, the technology of formation of epitaxial (Si2)1−x (GaP)t (0≤x≤1) layers on silicon substrates from the tin solution-melt using forced cooling is developed. The distribution of components over the thickness of Si-(Si2)1−x (GaP)x layers, the photosensitivity, and the current-voltage characteristics of the Si-(Si2)1−x (GaP)x heterostructures are studied. Analyses of the results of the X-ray studies and photoelectric properties of obtained solid-solution epitaxial layers indicate that the grown graded-gap (Si2)1−x (GaP)x layers have a high structural quality.

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