Composition and photoelectric properties of epitaxial silicon layers grown from a tin-based solution melt of technical silicon

Epitaxial layers of Si1−x Snx(0 < x < 0.04) solid solutions on silicon substrates were grown by liquid phase epitaxy from a tin-based solution melt of technical silicon. The distribution of components over the surface and in depth of the Si1−x Snx epilayers was determined. The photoelectric properties of obtained epilayers and heterostructures were studied. The results of these investigations showed that the obtained epilayers are structurally perfect and contain no metallic inclusions. The photosensitivity spectrum of obtained silicon epilayers is shifted toward longer wavelengths as compared to the spectra of silicon films obtained by usual methods.

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