Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures
А. С. СаидовScientific Production Association “Physics-Sun,”, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanМ. С. СаидовScientific Production Association “Physics-Sun,”, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovScientific Production Association “Physics-Sun,”, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanU. Kh. RakhmonovScientific Production Association “Physics-Sun,”, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y (0 ≤ x ≤ 0.03, 0 ≤ y ≤ 0.09) structures with a thin buffer layer of a solid solution of (Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.01, 0 ≤ y ≤ 0.01) located in the transient band of the p-n junction have been synthesized from a limited volume of tin solution melt by liquid-phase epitaxy. The heat-voltaic effect revealed in such a structure is explained by heat generation of electron-hole pairs with the participation of isovalent impurities of ZnSe and GaP, which introduce energy levels into the forbidden gap of silicon.
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