Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells
А. С. СаидовPhysics and Technology Institute, Academy of Science, Tashkent, Republic of UzbekistanK. A. AmonovPhysics and Technology Institute, Academy of Science, Tashkent, Republic of UzbekistanB. R. Kutlimurotov
ABI
Аннотация
Epitaxial layers of the solid solutions (Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of n-type conductivity on pSi base were cultivated by liquid phase epitaxy from a restricted amount of tin solution–melt. The spectral photosensitivity dependence of the pSi–n(Si2)1–x (ZnSe) x structure was studied. A peak was discovered in the response level within the interval of photon energy from 2.67 to 3 eV conditioned by the energy band of ZnSe “quantum dots,” which is located ~1.55 eV lower than the ceiling of the silicon valence band.
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